P-No CMOS Procees Spice Parametri

[tarook79]

Živjo,
Jaz sem trenutno delajo na načrtovanju vezja, ki jih je treba izvajati z uporabo P-No CMOS proces.
Ima kdo Spice parametrov za tranzistorje za tak postopek za tehnologijo 0,5 mikrona ali spodaj?

 

[Jake]

tukaj je, csmc05
. modela NVP PMOS
stopnja = 49
*
* SPLOŠNI PARAMETRI
*
lmin = 5.5e-7 Lmax = 2.0e-5 wmin = 6.0e-7 wmax = 2.0e-5
tref = 27,0
version = 3,2
Tox ='1 ,27 E-08 toxpn "
toxm = 1.27e-08
xj = 2.0000000e-07
nch = 3.9211000e
16lln = 0.1718000
lwn = 1.0000000
wln = 0.9096138
wwn = 1.9640454
Odpadki od Preja =-2.9392644e-10
ll = 4.8657780e-09
LW = 0,00
lwl = 3.2949680e-16
wint = 1.5321000e-07
= WL-3.1177917e-14
= ww-3.5282190e-20
wwl = 0,00
mobmod = 1
binunit = 2
xl ='0 ,00 E
00 xlpn "
xw ='0 ,00 E
00 xwpn "
lmlt = 1
wmlt = 1
binflag = 0
= DWG-7.5196240e-09
= dwb-8.8500040e-10
* NOISE MODEL PARAMETRI
noimod = 2
NoiA = 8.03959410758594E
18NoiB = 22750
NoiC = 0,00000000000324
Ef = 1,204
Em = 1840676.27288843
* Dioda PARAMETRI
acm = 2
ldif = 0,00
hdif = 6.00e-07
RSh = 169
rd = 0
rs = 0
RSC = 0
DRK = 0
*
* PRAG voltage PARAMETRI
*
vth0 = '-9.73E-01 vthpn "
k1 = 0.4109161
k2 = 1.9222172e-02 lk2 =-3.4000000e-08
K3 = 4.7544390
dvt0 = 1.9507611
dvt1 = 0.9552611
dvt2 = 0.2375000
dvt0w = 1.5924101
dvt1w = 1.6596450e
06dvt2w = 2.0000000e-02
nlx = 9.4674930e-09
= w0-4.4366630e-09
k3b = -1,7572563
ngate = 1.0000000e
30VFB = -0,1524965
*
* MOBILNOST PARAMETRI
*
= VSAT 1.1421400e
05 pvsat = 2.8353107e-09
UA = 4.2156900e-09 = pua-5.7302530e-23
= ub-6.2567930e-19
= uc-6.5204860e-11
rdsw = 7.5183910e
02prwb = -0,1286000
prwg = 1.5611597e-02
WR = 0.9781416
u0 = 2.5887955e-02
A0 = 0.9554556
= keta-1.3701160e-02
A1 = 0,00
a2 = 0.4000000
AGS = 0.1720220 zamikov = 2.2507542e-07
B0 = 6.5099060e-07
b1 = 1.4520109e-06
*
* SUBTHRESHOLD TEKOČI PARAMETRI
*
= voff-9.9300000e-02
nfactor = 0.8502510
= cit 2.4700000e-09
cdsc = 9.0727240e-06
= cdscb-1.5753420e-05
cdscd = 1.2948903e-03
eta0 = 0.3668273
= etab-4.1721060e-03
dsub = 0.7021100
*
* Iskopavati PARAMETRI
*
pclm = 2.7501225
pdiblc1 = 1.0000000e-05
pdiblc2 = 7.5469860e-03
pdiblcb = -0,1250000
drout = 3.0000000
pscbe1 = 5.0336000e
08pscbe2 = 4.5000000e-07
pvag = 1.0000000
delta = 1.0000000e-02
alpha0 = 0,00
alpha1 = 0,00
beta0 = 30.0000000
*
* TEMPERATURA UČINKI PARAMETRI
*
KT1 = -0,5000000
= kt2-5.7841390E-02
Na = 1.1792727E
02Ute = -1,4499991
Ua1 = 2.5594273E-09
= Ub1-8.0262190E-18
Uc1 = 4.5520970E-11
Kt1l = 8.9438480E-09
Prt = 8.2061230E-02
*
* Kapacitivnost PARAMETRI
*
CJ ='9 ,27 E-04 cjpn "
mj = 0,3928
pb = 0,7557
cjsw ='3 ,02 E-10 cjswpn "
mjsw = 0,1841
PHP = 0,5105
cjgate ='5 e ,0301-10 cjgatepn "
TPB = 0.0022064
tpbsw = 9.7723e-04
tcj = 7.3374e-04
tcjsw =-7.2026e-04
js = 1.00e-04
jsw = 0,00
n = 1,0
xti = 3,0
cgdo ='3 ,49 E-10 cgdopn "
cgso ='3 ,49 E-10 cgsopn "
cgbo = 1.0e-13
capmod = 2
nqsmod = 0
brest = 5
xpart = 0
= cgsl-2.4300000e-17
= cgdl-2.4300000e-17
ckappa = 0.6000000
cf = 0,00
CLC = 5.0000000e-12
cle = 2.3309000
DLC =-2.43e-17
dwc =-2.43e-17
vfbcv = -0,0871
LLC = 0
lwc = 0
wlc = 0
wwc = 0
lwlc = 0
wwlc = 0
moin = 15
noff = 1
voffcv = 0

 

[tarook79]

Živjo,
Parametri ste napoteni so PMOS tranzistor.
Imate parametri NMOS tranzistor v P-Pa tudi proces?